2N5109 silicon npn rf transistor description: the central semiconductor 2N5109 is a silicon npn epitaxial planar rf transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. marking: full part number maximum ratings: (t a =25c unless otherwise noted) symbol units collector-base voltage v cbo 40 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 3.0 v continuous collector current i c 400 ma continuous base current i b 400 ma power dissipation p d 1.0 w power dissipation (t c =75c) p d 2.5 w operating and storage junction temperature t j , t stg -65 to +200 c electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i cev v ce =35v, v be =1.5v 5.0 ma i cev v ce =15v, v be =1.5v, t c =150c 5.0 ma i ceo v ce =15v 20 a i ebo v eb =3.0v 100 a bv cbo i c =0.1ma 40 v bv cer i c =5.0ma, r be =10 40 v bv ceo i c =5.0ma 20 v v ce(sat) i c =100ma, i b =10ma 0.5 v h fe v ce =15v, i c =50ma 40 210 h fe v ce =5.0v, i c =360ma 5.0 f t v ce =15v, i c =50ma, f=200mhz 1200 mhz c ob v cb =15v, i e =0, f=1.0mhz 3.5 pf nf v ce =15v, i c =10ma, f=200mhz 3.0 db g pe v ce =15v, i c =50ma, f=200mhz 11 db to-39 case r4 (7-june 2011) www.centralsemi.com
2N5109 silicon npn rf transistor to-39 case - mechanical outline lead code: 1) emitter 2) base 3) collector marking: full part number www.centralsemi.com r4 (7-june 2011)
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